Two dynamic modes to streamline challenging atomic force microscopy measurements

• Alexei G. Temiryazev,
• Andrey V. Krayev and
• Marina P. Temiryazeva

Beilstein J. Nanotechnol. 2021, 12, 1226–1236, doi:10.3762/bjnano.12.90

• statement by the example of scanning the surface of bismuth telluride [27]. The main disadvantage of VM is the longer image acquisition time Tscan compared to standard scan modes. This is true if the surface is flat or if hard tapping at high initial amplitude is used for scanning a rough surface in AM-AFM

• broken micropipette (a) and an intact micropipette (b); AFM image of the tip of the probe (c), the surface of a SWCNT film (d); AFM image (without processing) of the surface of bismuth telluride (e). Scanning parameters for (a): 256 by 256 points, A0 = 12 nm, Tline = 2 s, Tdir =1.8 s, Vup = 20 µm/s

• experimental results. Acknowledgements The authors are grateful to P.I. Kuznetsov for the bismuth telluride samples provided. We acknowledge Artem K. Grebenko (LNM Skoltech) for the SWCNT film sample, and Vasilii Kolmogorov for micropipettes. Funding The work was partially supported by the Russian Foundation

Enhancement in thermoelectric properties due to Ag nanoparticles incorporated in Bi₂Te₃ matrix

• Srashti Gupta,
• Dinesh Chandra Agarwal,
• Bathula Sivaiah,
• Sankarakumar Amrithpandian,
• Kandasami Asokan,
• Ajay Dhar,
• Binaya Kumar Panigrahi,
• Devesh Kumar Avasthi and
• Vinay Gupta

Beilstein J. Nanotechnol. 2019, 10, 634–643, doi:10.3762/bjnano.10.63

• , Delhi 110067, India Amity Institute of Nanotechnology, Amity University, Noida-Uttar Pradesh-201303, India 10.3762/bjnano.10.63 Abstract The present study aims to see the enhancement in thermoelectric properties of bismuth telluride (Bi2Te3) annealed at different temperatures (573 and 773 K) through

• nanoparticles on thermoelectric properties can be understood on the basis of a carrier-filtering effect that results in an increase in thermopower along with a control over the reduction in electrical conductivity to maintain a high power factor yielding a high figure of merit. Keywords: bismuth telluride

• ; nanoparticles; power factor; thermoelectric power; Introduction Bismuth telluride (Bi2Te3) is an important semiconductor widely used as thermoelectric (TE) material for room-temperature applications to convert waste heat into electricity. The efficiency of a TE material can be defined by figure of merit (ZT

Review of nanostructured devices for thermoelectric applications

• Giovanni Pennelli

Beilstein J. Nanotechnol. 2014, 5, 1268–1284, doi:10.3762/bjnano.5.141

• measured in nanostructured bismuth antimony telluride alloys, because phonon scattering at nanocrystal boundaries gives a reduced thermal conductivity [26]. Hovewer, TEGs based on bismuth telluride compounds have a small operating temperature range, because the Z factor rapidly decreases well below 2 × 10